2sk3748 no.8250-1/7 features ? low on-resistance, low input capacitance, ultrahigh-speed switching ? high reliability (adoption of hvp process) ? attachment workability is good by mica-less package ? avalanche resistance guarantee speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 1500 v gate-to-source voltage v gss 20 v drain current (dc) i d * 4a drain current (pulse) i dp pw 10 s, duty cycle 1% 8 a allowable power dissipation p d 3.0 w tc=25 c65w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 165 mj avalanche current *2 i av 4a * shows chip capability * 1 v dd =50v, l=20mh, i av =4a (fig.1) * 2 l 20mh, single pulse package dimensions unit : mm (typ) 7538a-002 52312 tkim tc-00002764/72905 msim tb-00001688 / 31005qb tsim tb-00001272 sanyo semiconductors data sheet 2sk3748 n-channel silicon mosfet high-voltage, high-speed switching applications http:// semicon.sanyo.com/en/network ordering number : EN8250B product & package information ? package : to-3pf-3l ? jeita, jedec : sc-94 ? minimum packing quantity : 30 pcs./magazine marking electrical connection 1 3 2 k3748 lot no. 1 : gate 2 : drain 3 : source sanyo : to-3pf-3l 15.5 5.5 3.0 0.9 0.75 3.6 2.0 2.0 4.0 123 3.5 5.0 2.0 4.5 3.3 10.0 25.0 24.5 19.3 5.45 5.45 2.0 2sk3748-1e
2sk3748 no.8250-1/7 features ? low on-resistance, low input capacitance, ultrahigh-speed switching ? high reliability (adoption of hvp process) ? attachment workability is good by mica-less package ? avalanche resistance guarantee speci t cations absolute maximum ratings at ta=25c
2sk3748 no.8250-3/7 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a it09205 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a it09206 0 0 8 7 6 5 4 3 70 50 60 40 10 30 20 2 1 0 0 7 20 18 16 412 210 68 14 1 2 3 4 5 6 tc=25 c 10v 8v v gs =4v 5v 6v v ds =20v tc= --25 c 25 c 75 c gate-to-source voltage, v gs -- v r ds (on) -- v gs it09207 case temperature, tc -- c r ds (on) -- tc it09208 --50 --25 0 25 50 75 100 125 150 0 16 10 12 14 4 8 6 2 it09210 0 0.3 0.6 0.9 1.5 1.2 0.01 0.1 1.0 10 7 5 3 2 7 5 3 2 7 5 3 2 2 diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain current, i d -- a it09209 0.1 23 57 23 57 1.0 1.0 2 3 5 7 2 3 7 5 0.1 0 0 14 10 12 8 6 20 18 16 412 210 68 14 4 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns it09211 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf it09212 i d =2a 25 c tc=75 c --25 c i d =2a v gs =10v v ds =20v 25 c tc= --25 c 75 c 25 c --25 c tc=75 c v gs =0v static drain-to-source on-state resistance, r ds (on) -- static drain-to-source on-state resistance, r ds (on) -- 100 1000 10 3 2 3 2 5 5 7 7 0.1 1.0 23 57 3 2 v dd =200v v gs =10v t d (off) t f t r t d (on) 0 7 100 10 1000 10000 7 5 5 7 3 2 5 3 2 3 2 50 30 5152025354045 10 f=1mhz ciss coss crss forward transfer admittance, | y fs | -- s | y fs | -- i d
2sk3748 no.8250-4/7 a s o drain-to-source voltage, v ds -- v drain current, i d -- a it09213 total gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v 0 0 1 2 3 4 5 6 7 8 90 40 50 60 70 80 10 9 10 20 30 v ds =200v i d =4a 1.0 10 2 3 5 7 2 3 5 7 2 2 3 5 7 0.1 0.01 23 23 57 23 57 23 57 1.0 10 100 1000 it16890 10 s operation in this area is limited by r ds (on). 100 s 1ms 10ms 100ms i d =4a i dp =8a(pw 10 s) dc operation tc=25 c single pulse ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it09215 case temperature, tc -- c p d -- tc allowable power dissipation, p d -- w it09216 0 20 40 60 80 100 120 140 160 0 0.5 1.0 2.0 1.5 3.0 2.5 3.5 0 10 20 40 30 60 65 70 50 80 0 20 40 60 80 100 120 140 160
2sk3748 no.8250-5/7 magazine speci cation 2sk3748-1e
2sk3748 no.8250-6/7 outline drawing 2sk3748-1e mass (g) unit 5.5 * for reference mm
2sk3748 ps no.8250-7/7 this catalog provides information as of may, 2012. speci cations and information herein are subject to change without notice. note on usage : since the 2sk3748 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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